IEEE Journal of Quantum Electronics publication information
نویسندگان
چکیده
منابع مشابه
Efficient Semivectorial Mode Solvers - Quantum Electronics, IEEE Journal of
A method, based on a semivectorial finite difference scheme, is described to construct modal fields for any twodimensional refractive-index profile which is constant except at abrupt interfaces. The modal fields correspond to eigenvectors of the matrix equation to be solved. In order to find the eigenvectors and their corresponding eigenvalues, the matrix equation is formulated according to the...
متن کاملQuantum Interference Control of Electrical Currents in GaAs - Quantum Electronics, IEEE Journal of
In an earlier publication, preliminary observations of the generation of electrical currents were reported in GaAs and low-temperature-grown GaAs (LT-GaAs) at 295 K using quantum interference control of singleand two-photon band–band absorption of 1.55and 0.775m ultrashort optical pulses. Timeintegrated currents were measured via charge collection in a metal–semiconductor–metal (MSM) electrode ...
متن کاملBandwidth-Limited Diffraction of Femtosecond Pulses from Photorefractive Quantum Wells - Quantum Electronics, IEEE Journal of
The diffraction of 100-fs pulses from the static gratings of photorefractive quantum wells (QW’s) produces diffracted pulses that are nearly transform-limited, despite the strong dispersion near the quantum-confined excitonic transitions. This quality makes the QW’s candidates for use in femtosecond pulse shaping, although the currently limited bandwidth of the quantum-confined excitonic transi...
متن کاملThermal behavior of visible AlGaInP-GaInP ridge laser diodes - Quantum Electronics, IEEE Journal of
The thermal behavior of visible AIGaInP-GaInP ridge laser diodes is investigated numerically and experimentally. It is shown that various parameters critically influence the thermal resistance R of such devices. R is inversely proportional to the thermal conductivity of the heatsink. A substantial improvement in R-quite larger than in the AlGaAs system-is achieved for junction-side-down mountin...
متن کاملCarrier-induced change in refractive index of InP, GaAs and InGaAsP - Quantum Electronics, IEEE Journal of
We have theoretically estimated the change in refractive index A n produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 1016/cm3 to 10i9/cm3 and photon energies of 0.8 to 2.0 eV were considered. Predictions of A n are in reasonably good agreem...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 2023
ISSN: ['0018-9197', '1558-1713']
DOI: https://doi.org/10.1109/jqe.2023.3276683